This contribution is focused on the experimental characterization of a Doherty Power Amplifier (DPA) realized on a 100 nm gate length Gallium Nitride on Silicon (GaN-Si) technology for 28 GHz 5G applications. The DPA is based on a two-stage symmetric architecture, resulting in a 3 x 2 mm 2 chip area. When measured in continuous wave and at 28 GHz the chip achieves a saturated output power of 32 dBm with a gain of 13 dB and a power added efficiency close to 30% in a 6 dB of output power back-off. Such performances remain almost constant in a bandwidth larger than 1 GHz.

Giofre, R., Del Gaudio, A., & Limiti, E. (2019). A 28 GHz MMIC Doherty Power Amplifier in GaN on Si Technology for 5G Applications. In Proceedings of the 2019 IEEE International Microwave Symposium Digest (IMS 2019) (pp.611-613) [10.1109/MWSYM.2019.8700757].

A 28 GHz MMIC Doherty Power Amplifier in GaN on Si Technology for 5G Applications

Giofre, Rocco;Limiti, Ernesto
2019-06

Abstract

This contribution is focused on the experimental characterization of a Doherty Power Amplifier (DPA) realized on a 100 nm gate length Gallium Nitride on Silicon (GaN-Si) technology for 28 GHz 5G applications. The DPA is based on a two-stage symmetric architecture, resulting in a 3 x 2 mm 2 chip area. When measured in continuous wave and at 28 GHz the chip achieves a saturated output power of 32 dBm with a gain of 13 dB and a power added efficiency close to 30% in a 6 dB of output power back-off. Such performances remain almost constant in a bandwidth larger than 1 GHz.
IEEE International Microwave Symposium
Boston, MA (USA)
2019
2019 IEEE International Microwave Symposium Digest (IMS 2019)
Rilevanza internazionale
contributo
giu-2019
Settore ING-INF/01
English
Power generation, 5G mobile communication,Gain, Power measurement, Microwave circuits, Microwave integrated circuits
Intervento a convegno
Giofre, R., Del Gaudio, A., & Limiti, E. (2019). A 28 GHz MMIC Doherty Power Amplifier in GaN on Si Technology for 5G Applications. In Proceedings of the 2019 IEEE International Microwave Symposium Digest (IMS 2019) (pp.611-613) [10.1109/MWSYM.2019.8700757].
Giofre, R; Del Gaudio, A; Limiti, E
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/245348
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