This contribution is focused on the experimental characterization of a Doherty Power Amplifier (DPA) realized on a 100 nm gate length Gallium Nitride on Silicon (GaN-Si) technology for 28 GHz 5G applications. The DPA is based on a two-stage symmetric architecture, resulting in a 3 x 2 mm 2 chip area. When measured in continuous wave and at 28 GHz the chip achieves a saturated output power of 32 dBm with a gain of 13 dB and a power added efficiency close to 30% in a 6 dB of output power back-off. Such performances remain almost constant in a bandwidth larger than 1 GHz.
Giofre, R., Del Gaudio, A., Limiti, E. (2019). A 28 GHz MMIC Doherty Power Amplifier in GaN on Si Technology for 5G Applications. In Proceedings of the 2019 IEEE International Microwave Symposium Digest (IMS 2019) (pp.611-613) [10.1109/MWSYM.2019.8700757].
A 28 GHz MMIC Doherty Power Amplifier in GaN on Si Technology for 5G Applications
Giofre, Rocco;Limiti, Ernesto
2019-06-01
Abstract
This contribution is focused on the experimental characterization of a Doherty Power Amplifier (DPA) realized on a 100 nm gate length Gallium Nitride on Silicon (GaN-Si) technology for 28 GHz 5G applications. The DPA is based on a two-stage symmetric architecture, resulting in a 3 x 2 mm 2 chip area. When measured in continuous wave and at 28 GHz the chip achieves a saturated output power of 32 dBm with a gain of 13 dB and a power added efficiency close to 30% in a 6 dB of output power back-off. Such performances remain almost constant in a bandwidth larger than 1 GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
