This paper presents the design and initial tests of a Gallium Nitride on Silicon (GaN/Si) Single-Pole Double-Throw (SPDT) switch for space-borne satellite observation payloads operating at Ka-band and more precisely around 36GHz. The SPDT is synthesized through a series FET configuration, with inductive resonators, and exhibits (typically) 1.1dB measured insertion loss and 22dB isolation over the 33-39GHz bandwidth. Expected non-linear performance is +39dBm IP1dB. Results and performance are in line with previously published results in open literature but are obtained on a relatively inexpensive and most of all easily accessible Silicon substrate that is known for its higher RF losses with respect to its Silicon-Carbide (SiC) counterpart. To the best of the Authors' knowledge this is one of the first GaN on Silicon SPDTs published in this operating frequency.
Polli, G., Longhi, P.e., Colangeli, S., Fenu, S., Costanzo, F., Ciccognani, W., et al. (2019). GaN/Si ka-band SPDT for observation payloads. In Asia-Pacific Microwave Conference Proceedings (pp.288-290). Institute of Electrical and Electronics Engineers Inc. [10.1109/APMC46564.2019.9038632].
GaN/Si ka-band SPDT for observation payloads
Polli G.;Longhi P. E.
;Colangeli S.;Costanzo F.;Ciccognani W.;Limiti E.
2019-01-01
Abstract
This paper presents the design and initial tests of a Gallium Nitride on Silicon (GaN/Si) Single-Pole Double-Throw (SPDT) switch for space-borne satellite observation payloads operating at Ka-band and more precisely around 36GHz. The SPDT is synthesized through a series FET configuration, with inductive resonators, and exhibits (typically) 1.1dB measured insertion loss and 22dB isolation over the 33-39GHz bandwidth. Expected non-linear performance is +39dBm IP1dB. Results and performance are in line with previously published results in open literature but are obtained on a relatively inexpensive and most of all easily accessible Silicon substrate that is known for its higher RF losses with respect to its Silicon-Carbide (SiC) counterpart. To the best of the Authors' knowledge this is one of the first GaN on Silicon SPDTs published in this operating frequency.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
