Single-ended Power Amplifier at 185 GHz with Output Power More than 12 dBm

In this paper, we reported the design of single-ended power amplifier (PA) delivering an output power greater than 12 dBm at 185 GHz. The PA is designed using 130-nm SiGe BiCMOS technology. It consists of a power stage and two driver stages. These stages are designed to have cascode topology under class A biasing. EM simulation of the designed PA has been performed with ADS momentum. With the HICUM model, the PA shows a saturated output power (P sat ), maximum gain, and power added efficiency (PAE) of 12.4 dBm, 27 dB, and 7% respectively at 185 GHz. The PA shows more than 10 dBm of Psat from 150–205 GHz with PAE more than 4%. The 3 dB small signal gain bandwidth is 28 GHz. Such performances are state of the art for single-ended PAs based on SiGe HBTs.