In this paper a MMIC Low-Noise Amplifier operating in Ka-band is presented. The chosen technology is a 100 nm GaN HEMT on a High Resistivity Silicon substrate. A fully deterministic approach based on constant mismatch circles has been used for the preliminary synthesis of matching networks. The designed four-stages LNA presents a 33 dB gain, Input/Output matching better than 21 dB and a Noise Figure of no more than 2.3 dB in the whole operating band, showing the suitability of the chosen technology to low-noise, high gain and linearity applications.

Pace, L., Ciccognani, W., Colangeli, S., Longhi, P.e., Limiti, E., Leblanc, R. (2019). A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology. In Conference Proceedings on Ph.D Research in Microelectronics and Electronics (PRIME) (pp.161-164). New York : IEEE [10.1109/PRIME.2019.8787800].

A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology

Ciccognani, Walter;Colangeli, Sergio;Longhi, Patrick Ettore;Limiti, Ernesto;
2019-01-01

Abstract

In this paper a MMIC Low-Noise Amplifier operating in Ka-band is presented. The chosen technology is a 100 nm GaN HEMT on a High Resistivity Silicon substrate. A fully deterministic approach based on constant mismatch circles has been used for the preliminary synthesis of matching networks. The designed four-stages LNA presents a 33 dB gain, Input/Output matching better than 21 dB and a Noise Figure of no more than 2.3 dB in the whole operating band, showing the suitability of the chosen technology to low-noise, high gain and linearity applications.
Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 15th
Losanna (SWI)
2019
Rilevanza internazionale
contributo
2019
Settore ING-INF/01 - ELETTRONICA
English
Low-Noise Amplifier (LNA); Gallium Nitride (GaN); GaN-on-Si; high linearity; HEMT; Ka-band
Intervento a convegno
Pace, L., Ciccognani, W., Colangeli, S., Longhi, P.e., Limiti, E., Leblanc, R. (2019). A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology. In Conference Proceedings on Ph.D Research in Microelectronics and Electronics (PRIME) (pp.161-164). New York : IEEE [10.1109/PRIME.2019.8787800].
Pace, L; Ciccognani, W; Colangeli, S; Longhi, Pe; Limiti, E; Leblanc, R
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/225821
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 8
social impact