In this paper a MMIC Low-Noise Amplifier operating in Ka-band is presented. The chosen technology is a 100 nm GaN HEMT on a High Resistivity Silicon substrate. A fully deterministic approach based on constant mismatch circles has been used for the preliminary synthesis of matching networks. The designed four-stages LNA presents a 33 dB gain, Input/Output matching better than 21 dB and a Noise Figure of no more than 2.3 dB in the whole operating band, showing the suitability of the chosen technology to low-noise, high gain and linearity applications.
Pace, L., Ciccognani, W., Colangeli, S., Longhi, P.e., Limiti, E., Leblanc, R. (2019). A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology. In Conference Proceedings on Ph.D Research in Microelectronics and Electronics (PRIME) (pp.161-164). New York : IEEE [10.1109/PRIME.2019.8787800].
A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology
Ciccognani, Walter;Colangeli, Sergio;Longhi, Patrick Ettore;Limiti, Ernesto;
2019-01-01
Abstract
In this paper a MMIC Low-Noise Amplifier operating in Ka-band is presented. The chosen technology is a 100 nm GaN HEMT on a High Resistivity Silicon substrate. A fully deterministic approach based on constant mismatch circles has been used for the preliminary synthesis of matching networks. The designed four-stages LNA presents a 33 dB gain, Input/Output matching better than 21 dB and a Noise Figure of no more than 2.3 dB in the whole operating band, showing the suitability of the chosen technology to low-noise, high gain and linearity applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
