This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature. A combination of these two properties allows to obtain a very efficient sensing crossbar. Simulations to validate the quality of this new concept were performed at circuit level with SPICE, waiting for actual replies through prototypes testing.
Pellegrini, D., Ottavi, M., Martinelli, E., Di Natale, C. (2018). Complementary Resistive Switch Sensing. In 2018 IEEE INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT TOLERANCE IN VLSI AND NANOTECHNOLOGY SYSTEMS (DFT) (pp.1-5). IEEE [10.1109/DFT.2018.8602976].
Complementary Resistive Switch Sensing
Ottavi M.;Martinelli E.;Di Natale C.
2018-01-01
Abstract
This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature. A combination of these two properties allows to obtain a very efficient sensing crossbar. Simulations to validate the quality of this new concept were performed at circuit level with SPICE, waiting for actual replies through prototypes testing.| File | Dimensione | Formato | |
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