This contribution presents the design of a Monolithic Microwave Integrated Circuits (MMIC) power amplifier (PA) developed for radar applications in the upper Ka-band (35GHz - 40GHz). The MMIC is designed by using a 0.1 μm Gallium Nitride on Silicon (GaN-on-Si) millimetre wave process and employs a single-ended, four-stage configuration for an enhanced gain. The designed power amplifier can provide 4W of output power with an associated gain of at least 19dB and minimum 25% of power added efficiency (PAE) in the targeted frequency range.
Cipriani, E., Colantonio, P., Giannini, F. (2019). Ka-Band GaN-on-Si 4W MMIC High Power Amplifier for Millimetre-wave Radar. ??????? it.cilea.surplus.oa.citation.tipologie.CitationProceedings.prensentedAt ??????? 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Orlando (USA) [10.1109/PAWR.2019.8708736].
Ka-Band GaN-on-Si 4W MMIC High Power Amplifier for Millimetre-wave Radar
Colantonio, Paolo
;Giannini, Franco
2019-01-01
Abstract
This contribution presents the design of a Monolithic Microwave Integrated Circuits (MMIC) power amplifier (PA) developed for radar applications in the upper Ka-band (35GHz - 40GHz). The MMIC is designed by using a 0.1 μm Gallium Nitride on Silicon (GaN-on-Si) millimetre wave process and employs a single-ended, four-stage configuration for an enhanced gain. The designed power amplifier can provide 4W of output power with an associated gain of at least 19dB and minimum 25% of power added efficiency (PAE) in the targeted frequency range.| File | Dimensione | Formato | |
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