In this work, the authors investigated MoO3 films with thickness between 30 nm and 1 μm grown at room temperature by solid phase deposition on polycrystalline Cu substrates. Atomic force microscopy, scanning electron microscopy, and scanning tunneling microscopy revealed the presence of a homogenous MoO3 film with a “grainlike” morphology, while Raman spectroscopy showed an amorphous character of the film. Nanoindentation measurements evidenced a coating hardness and stiffness comparable with the copper substrate ones, while Auger electron spectroscopy, x-ray absorption spectroscopy, and secondary electron spectroscopy displayed a pure MoO3 stoichiometry and a work function ΦMoO3 = 6.5 eV, 1.8 eV higher than that of the Cu substrate. MoO3 films of thickness between 30 and 300 nm evidenced a metallic behavior, whereas for higher thickness, the resistance–temperature curves showed a semiconducting character. Published by the AVS.

Macis, S., Aramo, C., Bonavolonta, C., Cibin, G., D'Elia, A., Davoli, I., et al. (2019). MoO 3 films grown on polycrystalline Cu: Morphological, structural, and electronic properties. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS, 37(2), 021513 [10.1116/1.5078794].

MoO 3 films grown on polycrystalline Cu: Morphological, structural, and electronic properties

Macis S.
;
Davoli I.;Lucci M.;Miliucci M.;Scarselli M.;
2019-02-01

Abstract

In this work, the authors investigated MoO3 films with thickness between 30 nm and 1 μm grown at room temperature by solid phase deposition on polycrystalline Cu substrates. Atomic force microscopy, scanning electron microscopy, and scanning tunneling microscopy revealed the presence of a homogenous MoO3 film with a “grainlike” morphology, while Raman spectroscopy showed an amorphous character of the film. Nanoindentation measurements evidenced a coating hardness and stiffness comparable with the copper substrate ones, while Auger electron spectroscopy, x-ray absorption spectroscopy, and secondary electron spectroscopy displayed a pure MoO3 stoichiometry and a work function ΦMoO3 = 6.5 eV, 1.8 eV higher than that of the Cu substrate. MoO3 films of thickness between 30 and 300 nm evidenced a metallic behavior, whereas for higher thickness, the resistance–temperature curves showed a semiconducting character. Published by the AVS.
feb-2019
Pubblicato
Rilevanza internazionale
Articolo
Esperti anonimi
Settore FIS/03 - FISICA DELLA MATERIA
English
Con Impact Factor ISI
polycristalline Cu, MoO3 films, Raman, AFM, STM
Macis, S., Aramo, C., Bonavolonta, C., Cibin, G., D'Elia, A., Davoli, I., et al. (2019). MoO 3 films grown on polycrystalline Cu: Morphological, structural, and electronic properties. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS, 37(2), 021513 [10.1116/1.5078794].
Macis, S; Aramo, C; Bonavolonta, C; Cibin, G; D'Elia, A; Davoli, I; De Lucia, M; Lucci, M; Lupi, S; Miliucci, M; Notargiacomo, A; Ottaviani, C; Quaresima, C; Scarselli, M; Scifo, J; Valentino, M; De Padova, P; Marcelli, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/213371
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