This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, proposing for the first time a harmonic manipulation approach on a class C bias condition. Output network provides the power matching condition at fundamental frequency and an open circuit condition at the 3rd harmonic; the correct phase ratio between drain current components is assured by the proper input 2nd harmonic impedance. This solution allows to reach an efficiency higher than 60% in the frequency band 8.5 GHz–9.5 GHz.
Cipriani, E., Colantonio, P., Giannini, F. (2017). Class F-C X-band MMIC GaN power amplifier: An extension of waveform engineering approach. In Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2017 (pp.1-4). IEEE [10.1109/INMMIC.2017.7927299].
Class F-C X-band MMIC GaN power amplifier: An extension of waveform engineering approach
CIPRIANI, ELISA;COLANTONIO, PAOLO;GIANNINI, FRANCO
2017-01-01
Abstract
This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, proposing for the first time a harmonic manipulation approach on a class C bias condition. Output network provides the power matching condition at fundamental frequency and an open circuit condition at the 3rd harmonic; the correct phase ratio between drain current components is assured by the proper input 2nd harmonic impedance. This solution allows to reach an efficiency higher than 60% in the frequency band 8.5 GHz–9.5 GHz.| File | Dimensione | Formato | |
|---|---|---|---|
|
07927299.pdf
solo utenti autorizzati
Descrizione: Articolo pubblicato
Licenza:
Copyright dell'editore
Dimensione
587.88 kB
Formato
Adobe PDF
|
587.88 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
