We report on numerical simulations of quantum-dot heterostructures derived from experimental high-resolution transmission electron microscopy results. A real sample containing large InGaN islands with size of ten of nm and non-uniform In content is analyzed. The three-dimensional models for the quantum dots have been directly extrapolated from experimental results by a numerical algorithm. We show electromechanical, continuum k→ · p→, empirical tight-binding and optical calculations for these realistic structures, which present a very good agreement if compared with experimental measurements, implying that the use of realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.

Barettin, D., Auf Der Maur, M., Pecchia, A., Rodrigues, W., Tsatsulnikov, A.F., Sakharov, A.V., et al. (2015). Realistic model of LED structure with InGaN quantum-dots active region. In Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on (pp.1543-1546). IEEE [10.1109/NANO.2015.7388939].

Realistic model of LED structure with InGaN quantum-dots active region

AUF DER MAUR, MATTHIAS;PECCHIA, ALESSANDRO;RODRIGUES, WALTER;DI CARLO, ALDO
2015

Abstract

We report on numerical simulations of quantum-dot heterostructures derived from experimental high-resolution transmission electron microscopy results. A real sample containing large InGaN islands with size of ten of nm and non-uniform In content is analyzed. The three-dimensional models for the quantum dots have been directly extrapolated from experimental results by a numerical algorithm. We show electromechanical, continuum k→ · p→, empirical tight-binding and optical calculations for these realistic structures, which present a very good agreement if compared with experimental measurements, implying that the use of realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.
15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
ita
2015
Rilevanza internazionale
Settore ING-INF/01 - Elettronica
eng
LEDs; modeling; Quantum Dots; semiconductors;
Intervento a convegno
Barettin, D., Auf Der Maur, M., Pecchia, A., Rodrigues, W., Tsatsulnikov, A.F., Sakharov, A.V., et al. (2015). Realistic model of LED structure with InGaN quantum-dots active region. In Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on (pp.1543-1546). IEEE [10.1109/NANO.2015.7388939].
Barettin, D; AUF DER MAUR, M; Pecchia, A; Rodrigues, W; Tsatsulnikov, A; Sakharov, A; Lundin, W; Nikolaev, A; Cherkashin, N; Hytch, M; Karpov, S; DI CARLO, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/169872
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