In this work we present a study of electronic and optoelectronic properties of InGaN/GaN nanowire (NW) light-emitting diodes (LEDs) with a multiscale parametric approach. InGaN alloy bandgap bowing parameters extracted from empirical tight-binding (ETB) calculations are used in continuous level 3D simulation models. Strain and transport calculations are performed and quantum k·p-based models yield transition energies. Calculated emission energies are compared with experimental data showing a qualitative agreement within the experimental uncertainties.
Sacconi, F., Panetta, F., AUF DER MAUR, M., DI CARLO, A., Pecchia, A., Musolino, M., et al. (2015). Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes. In Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on (pp.1551-1554). IEEE [10.1109/NANO.2015.7388942].
Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes
AUF DER MAUR, MATTHIAS;DI CARLO, ALDO;
2015-01-01
Abstract
In this work we present a study of electronic and optoelectronic properties of InGaN/GaN nanowire (NW) light-emitting diodes (LEDs) with a multiscale parametric approach. InGaN alloy bandgap bowing parameters extracted from empirical tight-binding (ETB) calculations are used in continuous level 3D simulation models. Strain and transport calculations are performed and quantum k·p-based models yield transition energies. Calculated emission energies are compared with experimental data showing a qualitative agreement within the experimental uncertainties.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
