The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7GHz PA based on 0.25 umm GaN process from TriQuint. When tested with continuous wave signals the PA shows a saturated output power higher than 37 dBm, with an efficiency larger than 60% and an AM/AM and AM/PM distortions lower than 2 dB and +/-1 deg, respectively. The MMIC chip size is 3x3mm2.

The guidelines tor designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7 GHz PA based on 0.25 μm GaN process from Tri Quint. When tested with continuous wave signals the PA shows a saturated output power higher than 37 dBm, with an efficiency larger than 60 % and an AM/AM and AMIPM distortions lower than 2dB and ± 1 deg, respectively. The MMIC chip size is 3x3 mm2.

Giofre', R., Colantonio, P., Giannini, F. (2016). High efficiency and low distortion GaN MMIC power amplifier for 7 GHz applications. In Proceedings of XXI International Conference on Microwaves, Radar and Wireless Communications MIKON 2016 (pp.1-4). IEEE [10.1109/MIKON.2016.7492010].

High efficiency and low distortion GaN MMIC power amplifier for 7 GHz applications

GIOFRE', ROCCO;COLANTONIO, PAOLO;GIANNINI, FRANCO
2016-01-01

Abstract

The guidelines tor designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7 GHz PA based on 0.25 μm GaN process from Tri Quint. When tested with continuous wave signals the PA shows a saturated output power higher than 37 dBm, with an efficiency larger than 60 % and an AM/AM and AMIPM distortions lower than 2dB and ± 1 deg, respectively. The MMIC chip size is 3x3 mm2.
21st International Conference on Microwave, Radar and Wireless Communications, MIKON 2016
pol
2016
XXI
Rilevanza internazionale
contributo
mag-2016
2016
Settore ING-INF/01 - ELETTRONICA
English
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7GHz PA based on 0.25 umm GaN process from TriQuint. When tested with continuous wave signals the PA shows a saturated output power higher than 37 dBm, with an efficiency larger than 60% and an AM/AM and AM/PM distortions lower than 2 dB and +/-1 deg, respectively. The MMIC chip size is 3x3mm2.
Backhaul; GaN; High efficiency; High iinearity; Power amplifier;
Intervento a convegno
Giofre', R., Colantonio, P., Giannini, F. (2016). High efficiency and low distortion GaN MMIC power amplifier for 7 GHz applications. In Proceedings of XXI International Conference on Microwaves, Radar and Wireless Communications MIKON 2016 (pp.1-4). IEEE [10.1109/MIKON.2016.7492010].
Giofre', R; Colantonio, P; Giannini, F
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/155189
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