This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10x100-μm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.
Raffo, A., Colantonio, P., Cipriani, E., Vadalà, V., Bosi, G., Martin Guerrero, T., et al. (2015). Theoretical consideration on harmonic manipulated amplifiers based on experimental data. In Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015 (pp.1-3). IEEE [10.1109/INMMIC.2015.7330351].
Theoretical consideration on harmonic manipulated amplifiers based on experimental data
COLANTONIO, PAOLO;CIPRIANI, ELISA;GIANNINI, FRANCO
2015-01-01
Abstract
This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-μm 10x100-μm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.File | Dimensione | Formato | |
---|---|---|---|
07330351.pdf
solo utenti autorizzati
Descrizione: Articolo principale
Licenza:
Copyright dell'editore
Dimensione
1.54 MB
Formato
Adobe PDF
|
1.54 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.