This paper describes the development of an L-Band (f0 = 1.575GHz) high power and efficient amplifier designed for the European satellite navigation system (i.e., Galileo). The amplifier, developed in the framework of the European Project named SLOGAN, exploits the GH50-10 GaN technology available at United Monolithic Semiconductor foundry. The required output power level is achieved by parallelizing several GaN die power bars of 12mm and/or 26.5 mm. In continuous wave operating mode, the first prototype is able to deliver an output power higher than 250W at less than 2 dB of gain compression. Moreover, the registered gain and efficiency are higher than 54 dB and 54 %, respectively.
Giofre', R., Colantonio, P., Giannini, F., Gonzalez, L., de Arriba, F., Cabria, L., et al. (2015). A GaN high power and efficient amplifier for L-Band Galileo system. In Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015 (pp.1-3). IEEE [10.1109/INMMIC.2015.7330362].
A GaN high power and efficient amplifier for L-Band Galileo system
GIOFRE', ROCCO;COLANTONIO, PAOLO;GIANNINI, FRANCO;
2015-01-01
Abstract
This paper describes the development of an L-Band (f0 = 1.575GHz) high power and efficient amplifier designed for the European satellite navigation system (i.e., Galileo). The amplifier, developed in the framework of the European Project named SLOGAN, exploits the GH50-10 GaN technology available at United Monolithic Semiconductor foundry. The required output power level is achieved by parallelizing several GaN die power bars of 12mm and/or 26.5 mm. In continuous wave operating mode, the first prototype is able to deliver an output power higher than 250W at less than 2 dB of gain compression. Moreover, the registered gain and efficiency are higher than 54 dB and 54 %, respectively.File | Dimensione | Formato | |
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