Alternate Si and Ge monolayers deposited by molecular-beam epitaxy on Si0.7Ge0.3 alloy have been analyzed by means of photoluminescence spectroscopy. We measured well-resolved excitonic transitions located at 0.8 eV, far from the alloy emission with the same stoichiometric composition. We discuss this feature in terms of interface mixing producing an ordered alloy to accommodate the tetragonal strain in the Sim/Gen monolayer superlattice with m and n < 3.
Casalboni, M., Pinto, N., Izzi, B., Davoli, I., DE CRESCENZI, M., DE MATTEIS, F., et al. (1996). Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study. PHYSICAL REVIEW. B, CONDENSED MATTER, 53(3), 1030-1033.
Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study
CASALBONI, MAURO;DAVOLI, IVAN;DE CRESCENZI, MAURIZIO;DE MATTEIS, FABIO;PROSPOSITO, PAOLO;PIZZOFERRATO, ROBERTO
1996-01-01
Abstract
Alternate Si and Ge monolayers deposited by molecular-beam epitaxy on Si0.7Ge0.3 alloy have been analyzed by means of photoluminescence spectroscopy. We measured well-resolved excitonic transitions located at 0.8 eV, far from the alloy emission with the same stoichiometric composition. We discuss this feature in terms of interface mixing producing an ordered alloy to accommodate the tetragonal strain in the Sim/Gen monolayer superlattice with m and n < 3.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
