This paper presents a 3.4×2.3mm2 MMIC Doherty Power Amplifier in pHEMT GaAs technology, designed for XBand applications (9.6 GHz). The obtained results shown 31dBm maximum output power with a 47.6% associated drain efficiency. Moreover, in the designed 6dB of output power back-off, from 25dBm to 31dBm output power, the efficiency is higher than 30% with a related gain compression lower than 1.5dB. As will be detailed, such a performance are maintained almost constant in a frequency bandwidth greater than 10% (9.1-10.1 GHz).
Colantonio, P., Giannini, F., Giofre', R., Piacentini, M., Piazzon, L. (2010). GaAs MMIC Doherty power amplifier with asymmetrical drain bias voltage. In Proceedings of 18th international conference on microwaves, radar and wireless communications, MIKON (pp.479-482).
GaAs MMIC Doherty power amplifier with asymmetrical drain bias voltage
COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO;PIAZZON, LUCA
2010-06-01
Abstract
This paper presents a 3.4×2.3mm2 MMIC Doherty Power Amplifier in pHEMT GaAs technology, designed for XBand applications (9.6 GHz). The obtained results shown 31dBm maximum output power with a 47.6% associated drain efficiency. Moreover, in the designed 6dB of output power back-off, from 25dBm to 31dBm output power, the efficiency is higher than 30% with a related gain compression lower than 1.5dB. As will be detailed, such a performance are maintained almost constant in a frequency bandwidth greater than 10% (9.1-10.1 GHz).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
