This article describes the complete design of high performances Ka-Band small size Spatial Power Combiner (SPC) Amplifier. Several multiple physics aspects are treated in the proposed study as electromagnetic behavior and thermo-mechanical features. The combiner consists of quadruple Fin lines to microstrip (FLuS) transitions inserted into a WR28 waveguide T-junction. In this structure, 16 Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifiers (SSPA's) are integrated. In order to drive the active devices at full power, thermal exposition has been controlled by an opportune heat-sinker subjected to a cooling air flow. A main design has been followed by FEM simulation using Ansys-Ansoft HFSS and Comsol Multiphysics. Scattering parameters, stresses and strains have been computed together with the temperature and airflow distributions. A mean insertion loss of 2 dB is achieved with a return loss better the 10dB in the 31-37 GHz bandwidth while operating at maximum power. In such condition, the transistors present a maximum displacement of 28.7μm caused by the thermal expansion of the material due to a channel temperature of 125°C, and special techniques have to been applied to avoid the MMIC's breakage.
Leggieri, A., Passi, D., DI PAOLO, F., Bartocci, M., Tafuto, A., Manna, A. (2015). A novel Ka-band spatial combiner amplifier: Global design and modeling. In PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (pp.840-845). PIER.
A novel Ka-band spatial combiner amplifier: Global design and modeling
DI PAOLO, FRANCO;
2015-01-01
Abstract
This article describes the complete design of high performances Ka-Band small size Spatial Power Combiner (SPC) Amplifier. Several multiple physics aspects are treated in the proposed study as electromagnetic behavior and thermo-mechanical features. The combiner consists of quadruple Fin lines to microstrip (FLuS) transitions inserted into a WR28 waveguide T-junction. In this structure, 16 Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifiers (SSPA's) are integrated. In order to drive the active devices at full power, thermal exposition has been controlled by an opportune heat-sinker subjected to a cooling air flow. A main design has been followed by FEM simulation using Ansys-Ansoft HFSS and Comsol Multiphysics. Scattering parameters, stresses and strains have been computed together with the temperature and airflow distributions. A mean insertion loss of 2 dB is achieved with a return loss better the 10dB in the 31-37 GHz bandwidth while operating at maximum power. In such condition, the transistors present a maximum displacement of 28.7μm caused by the thermal expansion of the material due to a channel temperature of 125°C, and special techniques have to been applied to avoid the MMIC's breakage.File | Dimensione | Formato | |
---|---|---|---|
5 - PIERS - SPC TJ.pdf
solo utenti autorizzati
Licenza:
Non specificato
Dimensione
427.67 kB
Formato
Adobe PDF
|
427.67 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.