This contribution focus on the role played by the active device ON-resistance in the load modulation phenomena occurring in a Doherty power amplifier (DPA). This issue is analyzed from both theoretical and experimental point of view. The former demonstrates that to properly account for the ON-resistance of the Main device, a simultaneous optimization of the Auxiliary amplifier is mandatory to properly optimize the DPA performances. The theoretical results have been experimentally confirmed by presenting the design of two MMIC DPAs in GaAs technology, based on neither standard or advanced proposed approach. Both DPAs are designed to operate at X-Band (9.5GHz), showing an output power of 30dBm, while, in the overall range of 6 dB of output power back off (OBO), the achieved efficiency is no lower than 30%.

Piazzon, L., Colantonio, P., Giannini, F., Giofre', R. (2010). Design of a X-Band GaAs MMIC Doherty amplifier accounting for device RON resistance. In Proceedings of the european microwave conference, EUMC 2010 (pp.862-865).

Design of a X-Band GaAs MMIC Doherty amplifier accounting for device RON resistance

PIAZZON, LUCA;COLANTONIO, PAOLO;GIANNINI, FRANCO;GIOFRE', ROCCO
2010-09-01

Abstract

This contribution focus on the role played by the active device ON-resistance in the load modulation phenomena occurring in a Doherty power amplifier (DPA). This issue is analyzed from both theoretical and experimental point of view. The former demonstrates that to properly account for the ON-resistance of the Main device, a simultaneous optimization of the Auxiliary amplifier is mandatory to properly optimize the DPA performances. The theoretical results have been experimentally confirmed by presenting the design of two MMIC DPAs in GaAs technology, based on neither standard or advanced proposed approach. Both DPAs are designed to operate at X-Band (9.5GHz), showing an output power of 30dBm, while, in the overall range of 6 dB of output power back off (OBO), the achieved efficiency is no lower than 30%.
European microwave conference, EUMC 2010
Paris
2010
Rilevanza internazionale
contributo
set-2010
Settore ING-INF/01 - ELETTRONICA
English
Intervento a convegno
Piazzon, L., Colantonio, P., Giannini, F., Giofre', R. (2010). Design of a X-Band GaAs MMIC Doherty amplifier accounting for device RON resistance. In Proceedings of the european microwave conference, EUMC 2010 (pp.862-865).
Piazzon, L; Colantonio, P; Giannini, F; Giofre', R
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/11447
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