We report of time-resolved photocurrent thermography to measure transient temperatures in semiconductor devices with micrometer spatial resolution. This new technique is illustrated both for AlGaN/GaN and AlGaAs/GaAs HEMTs. A temporal resolution of microsecond order is demonstrated. The advantage of this method consists in the capability of measuring directly the temperature of the HEMT channel, even if this is well below the surface due to the fact that the collection efficiency of the channel is much higher. (C) 2012 Elsevier Ltd. All rights reserved.
Cina, L., DI CARLO, A., Reale, A. (2012). Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis. In Microelectronics Reliability: Special issue 23rd European symposium on the reliability of electron devices, failure physics and analysis (pp.2077-2080). Elsevier [10.1016/j.microrel.2012.06.060].
Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis
DI CARLO, ALDO;REALE, ANDREA
2012-01-01
Abstract
We report of time-resolved photocurrent thermography to measure transient temperatures in semiconductor devices with micrometer spatial resolution. This new technique is illustrated both for AlGaN/GaN and AlGaAs/GaAs HEMTs. A temporal resolution of microsecond order is demonstrated. The advantage of this method consists in the capability of measuring directly the temperature of the HEMT channel, even if this is well below the surface due to the fact that the collection efficiency of the channel is much higher. (C) 2012 Elsevier Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
