Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.

Mathew, J., Ottavi, M., Yang, Y., Pradhan, D. (2014). Using memristor state change behavior to identify faults in photovoltaic arrays. In Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 IEEE International Symposium on (pp.86-91). IEEE [10.1109/DFT.2014.6962094].

Using memristor state change behavior to identify faults in photovoltaic arrays

OTTAVI, MARCO;
2014-10-01

Abstract

Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.
2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)
Rilevanza internazionale
ott-2014
Settore ING-INF/01 - ELETTRONICA
English
Intervento a convegno
Mathew, J., Ottavi, M., Yang, Y., Pradhan, D. (2014). Using memristor state change behavior to identify faults in photovoltaic arrays. In Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2014 IEEE International Symposium on (pp.86-91). IEEE [10.1109/DFT.2014.6962094].
Mathew, J; Ottavi, M; Yang, Y; Pradhan, D
File in questo prodotto:
File Dimensione Formato  
06962094 (2).pdf

solo utenti autorizzati

Licenza: Copyright dell'editore
Dimensione 310.39 kB
Formato Adobe PDF
310.39 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/100407
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 3
social impact