A study of the structure and transport properties of highly textured, epitaxial oriented BaZr0.8Y0.2O3-x thin films grown on NdGaO3(110) is reported. Films have been grown by pulsed laser deposition and their conductivity studied as a function of temperature and thickness. The results show an increased conductance as the sample thickness decreases. The measured conductivity corresponding to an in-plane conductivity of 20 S cm(-1) has been systematically observed in the range of 550-600 degrees C for several 10 nm-thick films. The high values of conductivity are possibly related to the high densities of defects, mostly dislocations at the interface of the film with the substrate. (
Foglietti, V., Yang, N., Tebano, A., Aruta, C., DI BARTOLOMEO, E., Licoccia, S., et al. (2014). Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties. APPLIED PHYSICS LETTERS, 104(8) [10.1063/1.4867020].
Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties
TEBANO, ANTONELLO;DI BARTOLOMEO, ELISABETTA;LICOCCIA, SILVIA;BALESTRINO, GIUSEPPE
2014-02-24
Abstract
A study of the structure and transport properties of highly textured, epitaxial oriented BaZr0.8Y0.2O3-x thin films grown on NdGaO3(110) is reported. Films have been grown by pulsed laser deposition and their conductivity studied as a function of temperature and thickness. The results show an increased conductance as the sample thickness decreases. The measured conductivity corresponding to an in-plane conductivity of 20 S cm(-1) has been systematically observed in the range of 550-600 degrees C for several 10 nm-thick films. The high values of conductivity are possibly related to the high densities of defects, mostly dislocations at the interface of the film with the substrate. (I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
