Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.
AUF DER MAUR, M., Galler, B., Pietzonka, I., Strassburg, M., Lugauer, H., DI CARLO, A. (2014). Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes. APPLIED PHYSICS LETTERS, 105(13) [10.1063/1.4896970].
Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
AUF DER MAUR, MATTHIAS;DI CARLO, ALDO
2014-01-01
Abstract
Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.| File | Dimensione | Formato | |
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