In this contribution, an inverse-class-F (F-1) power amplifier at 1.7 GHz using GaN device is proposed and experimentally tested. The novelty in the design is the use of a three-layers rectangular slot resonators in microstrip line’s ground plane as harmonic filter. In particular, a planar periodic structure composed by two different slot resonators is used to control 2nd, 3rd harmonics and to match to 50 the fundamental frequency. Experimental results shows 60 % of drain efficiency and roughly 4 W of output power with 13 dB of associated gain.
Rassokhina, Y.v., Krizhanovski, V., Colantonio, P., Giofre', R. (2014). Inverse Class-F Power Amplifier Using Slot Resonators as a Harmonic Filter. INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY, 9(1), 49-53.
Inverse Class-F Power Amplifier Using Slot Resonators as a Harmonic Filter
COLANTONIO, PAOLO;GIOFRE', ROCCO
2014-01-01
Abstract
In this contribution, an inverse-class-F (F-1) power amplifier at 1.7 GHz using GaN device is proposed and experimentally tested. The novelty in the design is the use of a three-layers rectangular slot resonators in microstrip line’s ground plane as harmonic filter. In particular, a planar periodic structure composed by two different slot resonators is used to control 2nd, 3rd harmonics and to match to 50 the fundamental frequency. Experimental results shows 60 % of drain efficiency and roughly 4 W of output power with 13 dB of associated gain.| File | Dimensione | Formato | |
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