In this contribution, the design approach and the experimental results of an ultrawideband power amplifier in GaN technology is presented. The amplifier is designed in a single-ended configuration by using a 0.5 μm GaN HEMT with 1 mm gate periphery. The realized amplifier shows an efficiency higher than 40% with an output power greater than 36 dBm and an associated gain around 10 dB from 1 to 6 GHz.
Giofre', R., Colantonio, P., Giannini, F. (2014). 1-6 GHz ultrawideband 4 W single-ended GaN power amplifier. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 56(1), 215-217 [10.1002/mop.28080].
1-6 GHz ultrawideband 4 W single-ended GaN power amplifier
GIOFRE', ROCCO;COLANTONIO, PAOLO;GIANNINI, FRANCO
2014-01-01
Abstract
In this contribution, the design approach and the experimental results of an ultrawideband power amplifier in GaN technology is presented. The amplifier is designed in a single-ended configuration by using a 0.5 μm GaN HEMT with 1 mm gate periphery. The realized amplifier shows an efficiency higher than 40% with an output power greater than 36 dBm and an associated gain around 10 dB from 1 to 6 GHz.File in questo prodotto:
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