The successful growth of AlGaN nanocolumns by plasma assisted MBE, with different Al compositions, opened the way for achieving nano-heterostructures including GaN Quantum Discs (QDss). The luminescence emission from the QDss embedded in the AlGaN nanocolumns was tuned by changing their thickness and/or the Al composition of the barriers. Such a nano-heterostructure was then enclosed between two AlN/GaN Distributed Bragg Reflectors (DBR), with nominal reflectivities of 90 and 50%. The choice of the AlN/GaN bilayers for the DBRs allowed to reach these reflectivity values with a significantly lower number of periods, as compared to the AlGaN/GaN stacks. The resulting nanocavity has been characterized by cathodoluminescence (CL), and Scanning and Transmission Electron Microscopy (SEM, TEM). CL measurements show that the emission from the nanocavity is quite close to the targeted value. TEM data points to the need of optimized conditions to grow AlN columnar layers in order to avoid the lateral overgrowth in the columnar nanostructure.

Ristic, J., Calleja, E., Fernandez Garrido, S., Trampert, A., Jahn, U., Ploog, K., et al. (2005). GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE. PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH, 202(3), 367-371 [10.1002/pssa.200460327].

GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE

DI CARLO, ALDO
2005-01-01

Abstract

The successful growth of AlGaN nanocolumns by plasma assisted MBE, with different Al compositions, opened the way for achieving nano-heterostructures including GaN Quantum Discs (QDss). The luminescence emission from the QDss embedded in the AlGaN nanocolumns was tuned by changing their thickness and/or the Al composition of the barriers. Such a nano-heterostructure was then enclosed between two AlN/GaN Distributed Bragg Reflectors (DBR), with nominal reflectivities of 90 and 50%. The choice of the AlN/GaN bilayers for the DBRs allowed to reach these reflectivity values with a significantly lower number of periods, as compared to the AlGaN/GaN stacks. The resulting nanocavity has been characterized by cathodoluminescence (CL), and Scanning and Transmission Electron Microscopy (SEM, TEM). CL measurements show that the emission from the nanocavity is quite close to the targeted value. TEM data points to the need of optimized conditions to grow AlN columnar layers in order to avoid the lateral overgrowth in the columnar nanostructure.
2005
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - ELETTRONICA
English
Senza Impact Factor ISI
microcavities
http://onlinelibrary.wiley.com/doi/10.1002/pssa.200460327/pdf
Ristic, J., Calleja, E., Fernandez Garrido, S., Trampert, A., Jahn, U., Ploog, K., et al. (2005). GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE. PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH, 202(3), 367-371 [10.1002/pssa.200460327].
Ristic, J; Calleja, E; Fernandez Garrido, S; Trampert, A; Jahn, U; Ploog, K; Povoloskyi, M; DI CARLO, A
Articolo su rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/8132
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 15
  • ???jsp.display-item.citation.isi??? 15
social impact