We have studied the electron and hole focusing problem observed in gallium nitride (GaN) based microcavity lasers. We outlined the relation between the focusing efficiency and the unbalance between electron and hole mobilities. A new device structure is proposed where the n-layer is on the top of the p-layer, which overcomes the focusing limitation of conventional GaN based vertical cavity surface emitting lasers and polariton lasers.
Petrolati, E., DI CARLO, A. (2009). Enhancement of carrier focusing GaN based vertical cavity surface emitting lasers and polariton lasers. APPLIED PHYSICS LETTERS, 94(9) [10.1063/1.3080220].
Enhancement of carrier focusing GaN based vertical cavity surface emitting lasers and polariton lasers
DI CARLO, ALDO
2009-01-01
Abstract
We have studied the electron and hole focusing problem observed in gallium nitride (GaN) based microcavity lasers. We outlined the relation between the focusing efficiency and the unbalance between electron and hole mobilities. A new device structure is proposed where the n-layer is on the top of the p-layer, which overcomes the focusing limitation of conventional GaN based vertical cavity surface emitting lasers and polariton lasers.File in questo prodotto:
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