We report the observation of well-resolved A and B excitonic resonances in the reflectivity spectra of a wedged GaN/AlGaN quantum well (QW) with 5% Al content in the barriers for different well thicknesses. For the thicker well cases, the energy splitting between the A and B excitons is larger than the one found for bulk GaN. However, the A-B exciton energy splitting decreases with decreasing well thickness, accordingly to the delocalization of the electron and hole wave functions in very thin QWs, as supported by theoretical simulations. Moreover, we used time-resolved photoluminescence measurements to investigate the recombination dynamics of the two excitonic states demonstrating the existence of a thermodynamic equilibrium between the two populations at a sample temperature of 10 K.

Stokker Cheregi, F., Vinattieri, A., Feltin, E., Simeonov, D., Carlin, J., Butte, R., et al. (2009). Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(24), 47-55 [10.1103/PhysRevB.79.245316].

Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well

DI CARLO, ALDO;
2009-01-01

Abstract

We report the observation of well-resolved A and B excitonic resonances in the reflectivity spectra of a wedged GaN/AlGaN quantum well (QW) with 5% Al content in the barriers for different well thicknesses. For the thicker well cases, the energy splitting between the A and B excitons is larger than the one found for bulk GaN. However, the A-B exciton energy splitting decreases with decreasing well thickness, accordingly to the delocalization of the electron and hole wave functions in very thin QWs, as supported by theoretical simulations. Moreover, we used time-resolved photoluminescence measurements to investigate the recombination dynamics of the two excitonic states demonstrating the existence of a thermodynamic equilibrium between the two populations at a sample temperature of 10 K.
2009
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore ING-INF/01 - ELETTRONICA
English
Con Impact Factor ISI
aluminium compounds; excitons; gallium compounds; III-V semiconductors; photoluminescence; reflectivity; semiconductor quantum wells; thermodynamics; time resolved spectra; wide band gap semiconductors
http://prb.aps.org/pdf/PRB/v79/i24/e245316
Stokker Cheregi, F., Vinattieri, A., Feltin, E., Simeonov, D., Carlin, J., Butte, R., et al. (2009). Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(24), 47-55 [10.1103/PhysRevB.79.245316].
Stokker Cheregi, F; Vinattieri, A; Feltin, E; Simeonov, D; Carlin, J; Butte, R; Grandjean, N; Sacconi, F; Povolotskyi, M; DI CARLO, A; Gurioli, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2108/8062
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