The possibility to reduce the thermal conductivity leaving essentially unaltered the electron transport makes semiconducting nanowires ideal materials for the engineering of high-efficiency thermoelectric devices. A simple and appealing route to achieve these goals is bringing together Si and Ge, giving rise to Si1 x Gex alloy nanowires with tunable Ge concentration, core–shell structures and multiple axial junctions, i.e. superlattices. In this chapter we review the most recent pro- gresses in this field.
Amato, M., Palummo, M., Ossicini, S., Rurali, R. (2013). SiGe nanowires for thermoelectric applications. In Xiaodong Wang and Zhiming M. Wang (a cura di), Nanoscale thermoelectrics. Springer [10.1007/978-3-319-02012-9 5].
SiGe nanowires for thermoelectric applications
PALUMMO, MAURIZIA;
2013-11-01
Abstract
The possibility to reduce the thermal conductivity leaving essentially unaltered the electron transport makes semiconducting nanowires ideal materials for the engineering of high-efficiency thermoelectric devices. A simple and appealing route to achieve these goals is bringing together Si and Ge, giving rise to Si1 x Gex alloy nanowires with tunable Ge concentration, core–shell structures and multiple axial junctions, i.e. superlattices. In this chapter we review the most recent pro- gresses in this field.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
