The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm. (C) 2012 Elsevier B.V. All rights reserved.
Aramo, C., Ambrosio, A., Ambrosio, M., Castrucci, P., Cilmo, M., DE CRESCENZI, M., et al. (2012). Progress in the realization of a silicon-CNT photodetector. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 695, 150-153 [10.1016/j.nima.2011.12.098].
Progress in the realization of a silicon-CNT photodetector
CASTRUCCI, PAOLA;DE CRESCENZI, MAURIZIO;SCARSELLI, MANUELA ANGELA;
2012-12-01
Abstract
The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm. (C) 2012 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
