An investigation of the photoluminescence sensitivity of epitaxial surface InP quantum dots grown on In0.48Ga0.52P buffer layer lattice matched to GaAs substrate is presented. The emission wavelength of such quantum dots can be defined through the quantum dot dimensions in the range 750 – 865 nm. Quantum dot exposure to polar solvent vapour (methanol and ethanol) determines in any investigated case a luminescence intensity enhancement. The response to alcohol vapours affects only the luminescence intensity while peak position and shape remain unchanged. Optimization of the sensor response by tailoring quantum dots size and coverage has been demonstrated
De Angelis, R., D’Amico, L., Casalboni, M., Hatami, F., Masselink, W., Prosposito, P. (2012). Surface InP Quantum Dots: Effect of Morphology on the Photoluminescence Sensitivity. PROCEDIA ENGINEERING, 47, 1251 [10.1016/j.proeng.2012.09.380].
Surface InP Quantum Dots: Effect of Morphology on the Photoluminescence Sensitivity
CASALBONI, MAURO;PROSPOSITO, PAOLO
2012-01-01
Abstract
An investigation of the photoluminescence sensitivity of epitaxial surface InP quantum dots grown on In0.48Ga0.52P buffer layer lattice matched to GaAs substrate is presented. The emission wavelength of such quantum dots can be defined through the quantum dot dimensions in the range 750 – 865 nm. Quantum dot exposure to polar solvent vapour (methanol and ethanol) determines in any investigated case a luminescence intensity enhancement. The response to alcohol vapours affects only the luminescence intensity while peak position and shape remain unchanged. Optimization of the sensor response by tailoring quantum dots size and coverage has been demonstrated| File | Dimensione | Formato | |
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