This paper deals with a general analytic approach for the design of RF microelectromechanical system (MEMS) switches. The chosen configuration for these microwave devices is composed of two- coplanar transmission line sections separated by a metal membrane providing a shunt connected variable impedance. Using a bias voltage it is possible to actuate the switch. The adopted methodology for the development of the circuital model is based on the image impedance parameter representation of a two-port network. Synthesis equations are presented, and design considerations are discussed. The proposed approach is validated by means of electromagnetic simulations.
Bartolucci, G., De Angelis, G., Lucibello, A., Marcelli, R., Proietti, E. (2012). Analytic modeling of rf mems shunt connected capacitive switches. JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS, 26(8-9), 1168-1179 [10.1080/09205071.2012.710564].
Analytic modeling of rf mems shunt connected capacitive switches
BARTOLUCCI, GIANCARLO;
2012-01-01
Abstract
This paper deals with a general analytic approach for the design of RF microelectromechanical system (MEMS) switches. The chosen configuration for these microwave devices is composed of two- coplanar transmission line sections separated by a metal membrane providing a shunt connected variable impedance. Using a bias voltage it is possible to actuate the switch. The adopted methodology for the development of the circuital model is based on the image impedance parameter representation of a two-port network. Synthesis equations are presented, and design considerations are discussed. The proposed approach is validated by means of electromagnetic simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
