An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape.

Albrecht, S., Reining, L., Del Sole, R., & Onida, G. (1998). Ab initio calculation of excitonic effects in the optical spectra of semiconductors. PHYSICAL REVIEW LETTERS, 80(20), 4510-4513.

Ab initio calculation of excitonic effects in the optical spectra of semiconductors

DEL SOLE, RODOLFO;ONIDA, GIOVANNI
1998

Abstract

An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore FIS/03 - Fisica della Materia
English
Con Impact Factor ISI
absorption spectroscopy; band structure; calculations; electron energy levels; excitons; light absorption; numerical methods; spectrum analysis; bethe-Salpeter equation; excitonic effects; optical absorption spectra; semiconductor materials
Albrecht, S., Reining, L., Del Sole, R., & Onida, G. (1998). Ab initio calculation of excitonic effects in the optical spectra of semiconductors. PHYSICAL REVIEW LETTERS, 80(20), 4510-4513.
Albrecht, S; Reining, L; DEL SOLE, R; Onida, G
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/6326
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