Early stages of the HFCVD process on multi-vicinal silicon surfaces studied by electron microscopy probes (SEM, TEM)

In this paper, we show that silicon dimples are suitable samples to study diamond nucleation on a controlled distribution of defects by SEM FEG and HRTEM observations. Indeed, multi-vicinal surfaces generated by a UHV thermal treatment have been characterised by STM experiments. On these terraces, we observed a strong increase of the nucleation density higher than two orders of magnitude compared to pristine silicon samples. Moreover, a preferential location of diamond nuclei along the steps is reported. This result is explained by the large surface diffusion length of carbon species compared to the terrace's width. Indeed, during the early stages of growth, oriented silicon carbide nano-crystals are observed with the relationship SiC(220)//Si(220).