The nucleation and growth of CVD diamond has been investigated on scratched and virgin Si(100) by photoemission spectroscopy. In both cases, a silicon carbide layer of a depth of 1–2 nm forms rapidly. The formation of this layer is apparently independent of subsequent diamond nucleation, which occurs after a long induction time on the virgin sample. The results are rationalized using Avrami's law of the kinetics of surface coverage by diamond islands.
Demuynck, L., Arnault, J., Polini, R., LE NORMAND, F. (1997). CVD diamond nucleation and growth on scratched and virgin Si(100) surfaces investigated by in-situ electron spectroscopiy. SURFACE SCIENCE, 377-379(April 1997), 871-875 [http://dx.doi.org/10.1016/S0039-6028(96)01501-4].
CVD diamond nucleation and growth on scratched and virgin Si(100) surfaces investigated by in-situ electron spectroscopiy
POLINI, RICCARDO;
1997-01-01
Abstract
The nucleation and growth of CVD diamond has been investigated on scratched and virgin Si(100) by photoemission spectroscopy. In both cases, a silicon carbide layer of a depth of 1–2 nm forms rapidly. The formation of this layer is apparently independent of subsequent diamond nucleation, which occurs after a long induction time on the virgin sample. The results are rationalized using Avrami's law of the kinetics of surface coverage by diamond islands.| File | Dimensione | Formato | |
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