Al2O3-TiO2 thin films were prepared by a sol-gel processing. Sols were prepared having different TiO2/Al2O3 molar ratios, i.e., 9:1, 8:2, and 6:4, without and with the addition of 10 at% of K ions. The films were prepared by dipping the substrates (silicon wafers, alkali-free glass or alumina with comb-type Au electrodes) in the sols. The films were fired in air for 1h at 300, 500, 650 and 800°C. The films were amorphous, at any composition, up to the firing temperature of 500°C. Crystallization of the films was inhibited by larger contents of Al2O3 and K. The humidity-sensitive electrical properties of the thin films were studied using d.c. and a.c. measurements. The addition of K dramatically improved the relative humidity response of the films.
Traversa, E., M., B., DI BARTOLOMEO, E., Gusmano, G., P., I., A., M., et al. (1999). Electrical humidity response of sol-Gel processed undoped and alkali-doped TiO2-Al2O3 thin films. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 19(6-7), 753-758.
Electrical humidity response of sol-Gel processed undoped and alkali-doped TiO2-Al2O3 thin films
TRAVERSA, ENRICO;DI BARTOLOMEO, ELISABETTA;GUSMANO, GUALTIERO;
1999-01-01
Abstract
Al2O3-TiO2 thin films were prepared by a sol-gel processing. Sols were prepared having different TiO2/Al2O3 molar ratios, i.e., 9:1, 8:2, and 6:4, without and with the addition of 10 at% of K ions. The films were prepared by dipping the substrates (silicon wafers, alkali-free glass or alumina with comb-type Au electrodes) in the sols. The films were fired in air for 1h at 300, 500, 650 and 800°C. The films were amorphous, at any composition, up to the firing temperature of 500°C. Crystallization of the films was inhibited by larger contents of Al2O3 and K. The humidity-sensitive electrical properties of the thin films were studied using d.c. and a.c. measurements. The addition of K dramatically improved the relative humidity response of the films.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
