Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser treatments all the films show structural modifications. It has been obtained that with increasing, x the crystallinity degree of the Si phase decreases, while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been observed. In all the treated samples 3C-SiC crystallites have been detected. (c) 2005 Elsevier B.V. All rights reserved.
Coscia, U., Ambrosone, G., Minarini, C., Parisi, V., Schutzmann, S., Tebano, A. (2006). Structural modification of laser annealed a-Si1-xCx:H films. APPLIED SURFACE SCIENCE, 252(13 SPEC. ISS.), 4493-4496 [10.1016/j.apsusc.2005.07.130].
Structural modification of laser annealed a-Si1-xCx:H films
TEBANO, ANTONELLO
2006-01-01
Abstract
Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser treatments all the films show structural modifications. It has been obtained that with increasing, x the crystallinity degree of the Si phase decreases, while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been observed. In all the treated samples 3C-SiC crystallites have been detected. (c) 2005 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
