The growth conditions and the detection properties of a homoepitaxial diamond film, deposited in Roma "Tor Vergata" University Laboratories by microwave chemical vapor deposition on a high-pressure high-temperature single-crystal substrate are reported. An energy resolution as low as 1.1% was achieved when irradiating the device with 5.5 MeV Am-241 α-particles. The dependence of the charge collection efficiency and the energy resolution on the applied voltage are reported as well. A clear saturation plateau was observed in both curves. Preliminary results with 14.8 MeV neutron irradiation are reported, showing a well separated C-12(n,α(0))Be-9 reaction peak.
Balducci, A., Marinelli, M., Milani, E., Morgada, M., Pucella, G., Tucciarone, A., et al. (2005). Synthesis and characterization of a single-crystal chemical-vapor-deposition diamond particle detector. APPLIED PHYSICS LETTERS, 86(21), 213507 [10.1063/1.1935037].
Synthesis and characterization of a single-crystal chemical-vapor-deposition diamond particle detector
MARINELLI, MARCO;MILANI, ENRICO;TUCCIARONE, ALDO;VERONA RINATI, GIANLUCA;
2005-01-01
Abstract
The growth conditions and the detection properties of a homoepitaxial diamond film, deposited in Roma "Tor Vergata" University Laboratories by microwave chemical vapor deposition on a high-pressure high-temperature single-crystal substrate are reported. An energy resolution as low as 1.1% was achieved when irradiating the device with 5.5 MeV Am-241 α-particles. The dependence of the charge collection efficiency and the energy resolution on the applied voltage are reported as well. A clear saturation plateau was observed in both curves. Preliminary results with 14.8 MeV neutron irradiation are reported, showing a well separated C-12(n,α(0))Be-9 reaction peak.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
