Deposition rates of polycrystalline diamond films are investigated as a function of concentration of water vapor in a microwave chemical vapor deposition (CVD) apparatus. For CH4:H-2 = 2%: 98% gas composition the measured deposition rates are compared with mass spectroscopic data published in the literature and predictions suggested by the widely accepted methyl radical (CH3) diamond growth model. Our results do not confirm the CH3 model, but a good correlation is found between the concentration of CH5+ radicals and the deposition rates of diamond. The main reaction paths leading to diamond deposition from CH5+ are also presented.
Pinter, I., Marinelli, M., Tebano, A., Paoletti, A., Paroli, P. (1994). CH5 PRECURSOR MECHANISM FOR DIAMOND GROWTH. PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH, 141(2), 397-402 [10.1002/pssa.2211410219].
CH5 PRECURSOR MECHANISM FOR DIAMOND GROWTH
MARINELLI, MARCO;TEBANO, ANTONELLO;
1994-02-01
Abstract
Deposition rates of polycrystalline diamond films are investigated as a function of concentration of water vapor in a microwave chemical vapor deposition (CVD) apparatus. For CH4:H-2 = 2%: 98% gas composition the measured deposition rates are compared with mass spectroscopic data published in the literature and predictions suggested by the widely accepted methyl radical (CH3) diamond growth model. Our results do not confirm the CH3 model, but a good correlation is found between the concentration of CH5+ radicals and the deposition rates of diamond. The main reaction paths leading to diamond deposition from CH5+ are also presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
