In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p-type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral resolution of about 1.5%. The dependence of the width of the high efficiency region from applied bias voltage allows the constant residual doping concentration of the active region to be evaluated. The region where the electric field is absent shows an exponentially decreasing CCE profile, from which it is possible to estimate the diffusion length of the minority carriers by means of a drift-diffusion model. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Lo Giudice, A., Olivero, P., Manfredotti, C., Marinelli, M., Milani, E., Picollo, F., et al. (2011). Lateral IBIC characterization of single crystal synthetic diamond detectors. PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, 5(2), 80-82 [10.1002/pssr.201004488].
Lateral IBIC characterization of single crystal synthetic diamond detectors
MARINELLI, MARCO;MILANI, ENRICO;Verona, C;VERONA RINATI, GIANLUCA;
2011-02-01
Abstract
In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p-type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral resolution of about 1.5%. The dependence of the width of the high efficiency region from applied bias voltage allows the constant residual doping concentration of the active region to be evaluated. The region where the electric field is absent shows an exponentially decreasing CCE profile, from which it is possible to estimate the diffusion length of the minority carriers by means of a drift-diffusion model. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.File | Dimensione | Formato | |
---|---|---|---|
122.pdf
accesso aperto
Licenza:
Copyright dell'editore
Dimensione
895.51 kB
Formato
Adobe PDF
|
895.51 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.