A study on the effects of the geometrical and physical parameters of the GaAs MMIC process on the yield of large-signal circuits is presented, Large-signal yield analysis as well as large-signal yield optimization are performed using a large-signal lumped-element MIESFET model related to MMIC process parameters, and suitable for implementation in commercial microwave CAD tools, The characterization of all the statistical variables of a large-signal circuit provides a better understanding of the yield behavior, In particular, the sensitivity of large-signal yield to MMIC process parameters is computed and the statistical behaviour of each parameter is presented by means of yield sensitivity histograms. (C) 1998 John Wiley & Sons, Inc.
D'Agostino, S., Paoloni, C. (1998). Fast prediction and optimization of yield in gallium arsenide large-signal MMICs. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 8(1), 68-76 [10.1002/(SICI)1099-047X].
Fast prediction and optimization of yield in gallium arsenide large-signal MMICs
PAOLONI, CLAUDIO
1998-01-01
Abstract
A study on the effects of the geometrical and physical parameters of the GaAs MMIC process on the yield of large-signal circuits is presented, Large-signal yield analysis as well as large-signal yield optimization are performed using a large-signal lumped-element MIESFET model related to MMIC process parameters, and suitable for implementation in commercial microwave CAD tools, The characterization of all the statistical variables of a large-signal circuit provides a better understanding of the yield behavior, In particular, the sensitivity of large-signal yield to MMIC process parameters is computed and the statistical behaviour of each parameter is presented by means of yield sensitivity histograms. (C) 1998 John Wiley & Sons, Inc.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
