We report the low-pressure chemical vapor deposition growth and field emission characterization of silicon nanowires (SiNWs). Our field emission results show the importance of the so called conditioning process on the reproducibility of the emission performance itself; this effect has proven to be reversible for the investigated current regime. We explained this behavior by invoking a current-driven desorption of residual adsorbed gases. A highly reproducible turn-on electric field of 27 Vμm is found for a diode-connected SiNW planar sample. Furthermore, stability analysis is performed showing the technologically promising field emission behavior of the samples. © 2007 American Institute of Physics.
Riccitelli, R., DI CARLO, A., Fiori, A., Orlanducci, S. (2007). Field emission from silicon nanowires: conditioning and stability. JOURNAL OF APPLIED PHYSICS.
Field emission from silicon nanowires: conditioning and stability
DI CARLO, ALDO;ORLANDUCCI, SILVIA
2007-01-01
Abstract
We report the low-pressure chemical vapor deposition growth and field emission characterization of silicon nanowires (SiNWs). Our field emission results show the importance of the so called conditioning process on the reproducibility of the emission performance itself; this effect has proven to be reversible for the investigated current regime. We explained this behavior by invoking a current-driven desorption of residual adsorbed gases. A highly reproducible turn-on electric field of 27 Vμm is found for a diode-connected SiNW planar sample. Furthermore, stability analysis is performed showing the technologically promising field emission behavior of the samples. © 2007 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
