The electroreflectance spectrum of the layer compound gallium selenide shows that the peaks at 3.63 eV and 4.9 eV of the absolute reflectivity are due to threedimensional saddle points. The first transition is resolved in a doublet arising from a spin-orbit split valence state associated with the p orbitals of Se; this contrasts with some theoretical models and favours the view that the pxpy states of selenium are important in forming the upper valence band.
Balzarotti, A., Piacentini, M., Burattini, E., Picozzi, P. (1971). Electroreflectance and band structure of gallium selenide, 4(13), L273-L278 [10.1088/0022-3719/4/13/008].
Electroreflectance and band structure of gallium selenide
BALZAROTTI, ADALBERTO;
1971-01-01
Abstract
The electroreflectance spectrum of the layer compound gallium selenide shows that the peaks at 3.63 eV and 4.9 eV of the absolute reflectivity are due to threedimensional saddle points. The first transition is resolved in a doublet arising from a spin-orbit split valence state associated with the p orbitals of Se; this contrasts with some theoretical models and favours the view that the pxpy states of selenium are important in forming the upper valence band.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
