Optimization of hydrogen alarm sensor on semiconductor basis

A semiconductor based hydrogen sensor system was optimized by various modifications, which allow an improved detection of very low concentrations of hydrogen in air. The foundation for new investigations on the sensor structure are modifications of substrate and gate structures. Establishment of reference structures is a major aim. A possible drift compensation could be the use of aluminum or alloys for sensor system in order to stabilize signal in Metal Oxide Semiconductor (MOS) respectively Metal Electrolyte Insulator Semiconductor (MEIS) structures. Gold is more likely not capable to function for drift compensation as a pure metal. NafionTM treatment for cover up the palladium gate seems not to be suitable as a reference, besides could be an option to stabilize sensor signal responses and protect sensors from environmental influences.