Semitransparent perovskite solar cells (ST-PSCs) for tandem applications typically use a buffer layer deposited via atomic layer deposition (ALD) to protect the cell stack from the damage induced by the sputtering of the transparent electrode. Here, we present a simple yet effective solution-processed buffer layer based on metal-oxide nanoparticles to mitigate sputter-induced damage. We exploit this strategy in a monolithic tandem integrating the optimized ST-PSC on a polished front-side/unpolished rear-side p-type silicon heterojunction (SHJ) solar cell. The intrinsic roughness on the backside significantly boosts the absorption, thus suppressing the need for a dedicated texturization step and leading to a final maximum efficiency of 25.3%. Our findings highlight the potential of solution-processed buffer layers as a practical and scalable solution to mitigate the sputtering damage, as well as the potential of silicon wafers with an unpolished rear surface for enhanced photocurrent.
Magliano, E., Di Giacomo, F., Sathy, H.r., Pourmotlagh, S.m., Giliberti, G., Becerril Rodriguez, D., et al. (2025). Solution-Processed Metal-Oxide Nanoparticles to Prevent The Sputtering Damage in Perovskite/Silicon Tandem Solar Cells. ACS APPLIED MATERIALS & INTERFACES, 17(11), 17599-17610 [10.1021/acsami.5c00090].
Solution-Processed Metal-Oxide Nanoparticles to Prevent The Sputtering Damage in Perovskite/Silicon Tandem Solar Cells
Erica Magliano;Francesco Di Giacomo;Harshavardhan Reddy Sathy;Gemma Giliberti;Giuseppe Ammirati;Paolo Mariani;Francesca Zarotti;Fabio Matteocci;Aldo Di Carlo
2025-01-01
Abstract
Semitransparent perovskite solar cells (ST-PSCs) for tandem applications typically use a buffer layer deposited via atomic layer deposition (ALD) to protect the cell stack from the damage induced by the sputtering of the transparent electrode. Here, we present a simple yet effective solution-processed buffer layer based on metal-oxide nanoparticles to mitigate sputter-induced damage. We exploit this strategy in a monolithic tandem integrating the optimized ST-PSC on a polished front-side/unpolished rear-side p-type silicon heterojunction (SHJ) solar cell. The intrinsic roughness on the backside significantly boosts the absorption, thus suppressing the need for a dedicated texturization step and leading to a final maximum efficiency of 25.3%. Our findings highlight the potential of solution-processed buffer layers as a practical and scalable solution to mitigate the sputtering damage, as well as the potential of silicon wafers with an unpolished rear surface for enhanced photocurrent.| File | Dimensione | Formato | |
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