Well separated particles of diamond have been obtained on Si(100) surface by the hot filament chemical vapor deposition technique after scratching by diamond paste. Consecutive depositions, one at a higher and one at lower temperature, or at different CH4 contents of the gas mixture, together with a kinetic analysis based on the particle size distribution function, allow one to decide about the relative importance of heterogeneous nucleation and of seeding.

Molinari, E., Polini, R., & Tomellini, M. (1992). Diamond crystallite formation on Si(100) from the gas phase: Seeding or heterogeneous nucleation. APPLIED PHYSICS LETTERS, 61(11), 1287-1289 [10.1063/1.107567].

Diamond crystallite formation on Si(100) from the gas phase: Seeding or heterogeneous nucleation

MOLINARI, ETTORE;POLINI, RICCARDO;TOMELLINI, MASSIMO
1992

Abstract

Well separated particles of diamond have been obtained on Si(100) surface by the hot filament chemical vapor deposition technique after scratching by diamond paste. Consecutive depositions, one at a higher and one at lower temperature, or at different CH4 contents of the gas mixture, together with a kinetic analysis based on the particle size distribution function, allow one to decide about the relative importance of heterogeneous nucleation and of seeding.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore CHIM/03 - Chimica Generale e Inorganica
English
Con Impact Factor ISI
Diamond; CVD; SILICON; Nucleation; GROWTH; FILMS
Molinari, E., Polini, R., & Tomellini, M. (1992). Diamond crystallite formation on Si(100) from the gas phase: Seeding or heterogeneous nucleation. APPLIED PHYSICS LETTERS, 61(11), 1287-1289 [10.1063/1.107567].
Molinari, E; Polini, R; Tomellini, M
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/44610
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