Langmuir-Blodgett (LB) films of 5,10,15,20-tetrakis-[4-(1-Heptyloxy) phenyl]porphyrin (H2 THOPP) in a 1/4 molar ratio with arachidic acid have been deposited onto quartz and silver substrates at the surface pressure of 25 mN/m. A detailed analysis of the Langmuir isotherms is presented. Optical absorption spectra show aggregation of the porphyrins in the LB film. The deposited layers have been characterised by Reflectance Anisotropy Spectroscopy (RAS), showing a large anisotropy signal measured in the Soret band energy region. © 2002 Elsevier Science B.V. All rights reserved.

Paolesse, R., Valli, L., Goletti, C., Di Natale, C., Froiio, A., Macagnano, A., et al. (2002). Langmuir-Blodgett films of a modified tetraphenylporphyrin. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 22(2), 219-225 [10.1016/S0928-4931(02)00169-8].

Langmuir-Blodgett films of a modified tetraphenylporphyrin

PAOLESSE, ROBERTO;GOLETTI, CLAUDIO;DI NATALE, CORRADO;CHIARADIA, PIETRO;D'AMICO, ARNALDO
2002

Abstract

Langmuir-Blodgett (LB) films of 5,10,15,20-tetrakis-[4-(1-Heptyloxy) phenyl]porphyrin (H2 THOPP) in a 1/4 molar ratio with arachidic acid have been deposited onto quartz and silver substrates at the surface pressure of 25 mN/m. A detailed analysis of the Langmuir isotherms is presented. Optical absorption spectra show aggregation of the porphyrins in the LB film. The deposited layers have been characterised by Reflectance Anisotropy Spectroscopy (RAS), showing a large anisotropy signal measured in the Soret band energy region. © 2002 Elsevier Science B.V. All rights reserved.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore CHIM/07 - Fondamenti Chimici delle Tecnologie
Settore ING-INF/01 - Elettronica
English
Con Impact Factor ISI
Langmuir-Blodgett films; Reflectance Anisotropy Spectroscopy; Tetraphenylporphyrin
Paolesse, R., Valli, L., Goletti, C., Di Natale, C., Froiio, A., Macagnano, A., et al. (2002). Langmuir-Blodgett films of a modified tetraphenylporphyrin. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 22(2), 219-225 [10.1016/S0928-4931(02)00169-8].
Paolesse, R; Valli, L; Goletti, C; DI NATALE, C; Froiio, A; Macagnano, A; Bussetti, G; Chiaradia, P; D'Amico, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/44564
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