In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge-Sb-Te alloys (GST)—that can be used as a prediction tool for thin film deposition. This framework for epitaxy at the atomic scale allowsfordesigningtailoredcrystallineGSTphaseswithpreciseatomiclayerstackingconfigurations.Byleveraginginsightsinto phasestability,weoptimizegrowthconditionstoachievehigh-quality,bidimensionalGSTstructuresofdifferentcompositions (Ge2Sb2Te5,Ge3Sb2Te6, andGe1Sb2Te4)andphases(ordered-cubicandtrigonal).Moreover,weexaminetheinfluenceofstructural anisotropiesandinterfaceeffectsonthelow-temperaturemagneto-transportproperties.Theorientationalorderingofthevacancy layersandtheirevolutionintovanderWaalsgapsalterstheelectricalconductiondramatically,plausiblyalsointhepresenceof thetopologicalsurfacestatesandtheircouplingwiththebulkstates.Inaddition,weexaminethereversibletransitionbetween twostableresistancestatesinamemorycellfortheGSTpreciselytailoredbythegrowthusingMolecularBeamEpitaxy(MBE). Itstexturedstructurefavorslowpowerconsumption,makingitapromisingcandidateforphase-changememorytechnology.
Bragaglia, V., Arciprete, F., Prili, S., Takagaki, Y., Mio, A.m., Mazzarello, R., et al. (2026). Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases. ADVANCED MATERIALS INTERFACES, 13(1) [10.1002/admi.202500937].
Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases
Arciprete, Fabrizio;Prili, Simone
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2026-01-01
Abstract
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge-Sb-Te alloys (GST)—that can be used as a prediction tool for thin film deposition. This framework for epitaxy at the atomic scale allowsfordesigningtailoredcrystallineGSTphaseswithpreciseatomiclayerstackingconfigurations.Byleveraginginsightsinto phasestability,weoptimizegrowthconditionstoachievehigh-quality,bidimensionalGSTstructuresofdifferentcompositions (Ge2Sb2Te5,Ge3Sb2Te6, andGe1Sb2Te4)andphases(ordered-cubicandtrigonal).Moreover,weexaminetheinfluenceofstructural anisotropiesandinterfaceeffectsonthelow-temperaturemagneto-transportproperties.Theorientationalorderingofthevacancy layersandtheirevolutionintovanderWaalsgapsalterstheelectricalconductiondramatically,plausiblyalsointhepresenceof thetopologicalsurfacestatesandtheircouplingwiththebulkstates.Inaddition,weexaminethereversibletransitionbetween twostableresistancestatesinamemorycellfortheGSTpreciselytailoredbythegrowthusingMolecularBeamEpitaxy(MBE). Itstexturedstructurefavorslowpowerconsumption,makingitapromisingcandidateforphase-changememorytechnology.| File | Dimensione | Formato | |
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