A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InClx. Annealing at 330 degreesC induces desorption of this overlayer and reveals a clean arsenic-rich (2x4)/c(2x8) surface. The indium-rich (4x2)/c(8x2) reconstruction is obtained upon further annealing to 410 degreesC. (C) 2003 American Institute of Physics.
Tereshchenko, O., Paget, D., Chiaradia, P., Bonnet, J., Wiame, F., Taleb_lbrahimi, A. (2003). Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments. APPLIED PHYSICS LETTERS, 82, 4280 [10.1063/1.1583851].
Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments
CHIARADIA, PIETRO;
2003-01-01
Abstract
A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InClx. Annealing at 330 degreesC induces desorption of this overlayer and reveals a clean arsenic-rich (2x4)/c(2x8) surface. The indium-rich (4x2)/c(8x2) reconstruction is obtained upon further annealing to 410 degreesC. (C) 2003 American Institute of Physics.Questo articolo è pubblicato sotto una Licenza Licenza Creative Commons
