The atomic-scale desorption of hydrogen atoms from the Si(100)-2x1:H surface with the tip of the scanning tunneling microscope has been studied using two different desorption methods, namely the stationary and scanning modes. Both p-type and n-type silicon samples have been investigated and a statistical large data set has been acquired. At low sample voltage (+2.5 V), the desorption yield has been found to follow a power law of the tunnel current I-alpha, with alpha being much smaller (approximate to1) than in previous reports (approximate to10-15). This means that highly dissipative inelastic electronic channels with very few electrons involved (approximate to2) are more favorable than previously proposed schemes involving many (approximate to11-16) weakly dissipative electrons.

Soukiassian, L., Mayne, A.J., Carbone, M., & Dujardin, G. (2003). Atomic-scale desorption of H atoms from the Si(100)-2x1 : H surface: Inelastic electron interactions. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 68(3), 35303 [10.1103/PhysRevB.68.035303].

Atomic-scale desorption of H atoms from the Si(100)-2x1 : H surface: Inelastic electron interactions

CARBONE, MARILENA;
2003

Abstract

The atomic-scale desorption of hydrogen atoms from the Si(100)-2x1:H surface with the tip of the scanning tunneling microscope has been studied using two different desorption methods, namely the stationary and scanning modes. Both p-type and n-type silicon samples have been investigated and a statistical large data set has been acquired. At low sample voltage (+2.5 V), the desorption yield has been found to follow a power law of the tunnel current I-alpha, with alpha being much smaller (approximate to1) than in previous reports (approximate to10-15). This means that highly dissipative inelastic electronic channels with very few electrons involved (approximate to2) are more favorable than previously proposed schemes involving many (approximate to11-16) weakly dissipative electrons.
Pubblicato
Rilevanza internazionale
Articolo
Sì, ma tipo non specificato
Settore CHIM/03 - Chimica Generale e Inorganica
Settore CHIM/02 - Chimica Fisica
English
Con Impact Factor ISI
hydrogen; silicon; article; controlled study; desorption; elasticity; electric current; electric potential; electron; heating; molecular interaction; scanning tunneling microscopy; vibration
Soukiassian, L., Mayne, A.J., Carbone, M., & Dujardin, G. (2003). Atomic-scale desorption of H atoms from the Si(100)-2x1 : H surface: Inelastic electron interactions. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 68(3), 35303 [10.1103/PhysRevB.68.035303].
Soukiassian, L; Mayne, A; Carbone, M; Dujardin, G
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2108/43006
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