A new class of radiation detectors based on carbon nanostructures as the active photosensitive element has been recently developed. In this scenario the optimization of the device, both in dark and on light irradiation, is a crucial point. Here, we report on electrical measurements performed in dark conditions on carbon nanofibers and nanotubes deposited on silicon substrates. Our experimental results were interpreted in terms of a multistep tunneling process occurring at the carbon nanostructures/silicon interface.
Tinti, A., Righetti, F., Ligonzo, T., Valentini, A., Nappi, E., Ambrosio, A., et al. (2011). Electrical analysis of carbon-nanostructures/silicon heterojunctions designed for radiation detection. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 629(1), 377-381 [10.1016/j.nima.2010.11.097].
Electrical analysis of carbon-nanostructures/silicon heterojunctions designed for radiation detection
CASTRUCCI, PAOLA;SCARSELLI, MANUELA ANGELA;DE CRESCENZI, MAURIZIO;
2011-01-01
Abstract
A new class of radiation detectors based on carbon nanostructures as the active photosensitive element has been recently developed. In this scenario the optimization of the device, both in dark and on light irradiation, is a crucial point. Here, we report on electrical measurements performed in dark conditions on carbon nanofibers and nanotubes deposited on silicon substrates. Our experimental results were interpreted in terms of a multistep tunneling process occurring at the carbon nanostructures/silicon interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
