A combined scanning tunneling microscopy and low-energy electron diffraction investigation of the Mn/GaAs(001) interface formation is reported. The interface, grown on a (2 4) reconstructed substrate produced by molecular beam epitaxy, was studied as a function of Mn evaporation with thickness ranging from 1/8 ML to 1 ML. The interaction of Mn atoms with the semiconductor surface is strong and leads to surface reconstructions involving a rearrangement of the two outmost atomic layers of the substrate. For Mn thickness lower than 1/2 ML, the surface is characterized by a (2 1) periodicity. Conversely, when the Mn deposition is increased to 1/2 ML the surface reconstruction is strongly dependent on the preparation procedure. If Mn deposition is performed on the substrate at 390 C, a fully ordered surface characterized by a clear (2 2) reconstruction is obtained, whereas, annealing the sample after Mn deposition, gives a disordered surface with a (2 1) symmetry. An intermediate phase between (2 1) and (2 2) is found for Mn depositions in between 1/4 and 1/2 ML. No further structural evolution was observed for both preparation methods above 1/2 ML coverage.
Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., & Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522 [10.1063/1.3601518].
|Tipologia:||Articolo su rivista|
|Citazione:||Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., & Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522 [10.1063/1.3601518].|
|IF:||Con Impact Factor ISI|
|Settore Scientifico Disciplinare:||Settore FIS/03 - Fisica della Materia|
|Revisione (peer review):||Sì, ma tipo non specificato|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1063/1.3601518|
|Stato di pubblicazione:||Pubblicato|
|Data di pubblicazione:||23-giu-2011|
|Titolo:||The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface|
|Autori:||Colonna, S; Placidi, E; Ronci, F; Cricenti, A; Arciprete, F; Balzarotti, A|
|Appare nelle tipologie:||01 - Articolo su rivista|