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EnglishA combined scanning tunneling microscopy and low-energy electron diffraction investigation of the Mn/GaAs(001) interface formation is reported. The interface, grown on a (2 4) reconstructed substrate produced by molecular beam epitaxy, was studied as a function of Mn evaporation with thickness ranging from 1/8 ML to 1 ML. The interaction of Mn atoms with the semiconductor surface is strong and leads to surface reconstructions involving a rearrangement of the two outmost atomic layers of the substrate. For Mn thickness lower than 1/2 ML, the surface is characterized by a (2 1) periodicity. Conversely, when the Mn deposition is increased to 1/2 ML the surface reconstruction is strongly dependent on the preparation procedure. If Mn deposition is performed on the substrate at 390 C, a fully ordered surface characterized by a clear (2 2) reconstruction is obtained, whereas, annealing the sample after Mn deposition, gives a disordered surface with a (2 1) symmetry. An intermediate phase between (2 1) and (2 2) is found for Mn depositions in between 1/4 and 1/2 ML. No further structural evolution was observed for both preparation methods above 1/2 ML coverage.
Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., & Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522 [10.1063/1.3601518].
| Tipologia: | Articolo su rivista | |
| Citazione: | Colonna, S., Placidi, E., Ronci, F., Cricenti, A., Arciprete, F., & Balzarotti, A. (2011). The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface. JOURNAL OF APPLIED PHYSICS, 109(12), 123522 [10.1063/1.3601518]. | |
| URL: | http://scitation.aip.org/content/aip/journal/jap/109/12/10.1063/1.3601518 | |
| IF: | Con Impact Factor ISI | |
| Lingua: | English | |
| Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia | |
| Revisione (peer review): | Sì, ma tipo non specificato | |
| Tipo: | Articolo | |
| Rilevanza: | Rilevanza internazionale | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.3601518 | |
| Stato di pubblicazione: | Pubblicato | |
| Data di pubblicazione: | 23-giu-2011 | |
| Titolo: | The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface | |
| Autori: | ||
| Autori: | Colonna, S; Placidi, E; Ronci, F; Cricenti, A; Arciprete, F; Balzarotti, A | |
| Appare nelle tipologie: | 01 - Articolo su rivista |
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|---|---|---|---|---|
| JAP_109_123522_(2011).pdf | Articolo principale | N/A | Copyright dell'editore | UNIVERSITY_NETWORK Richiedi una copia |
http://hdl.handle.net/2108/40966
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